 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP9926EO Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 28m 4.6A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 12 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 125 Unit /W Data and specifications subject to change without notice 20112502 AP9926EO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 9.7 12.5 1 6.5 5 9 26.2 6.8 355 190 85 Max. Units 28 40 1 25 10 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A VGS=2.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=4.6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= 10 V ID=4.6A VDS=20V VGS=5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V,VS=1.2V Tj=25,IS=1.25A,VGS=0V Min. - Typ. - Max. Units 0.83 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad. AP9926EO 25 24 T C =25 C 20 o 4.5V 4.0V 3.5V 3.0V 18 T C =150 o C 4.5V 4.0V 3.5V 3.0V ID , Drain Current (A) 15 2.5V ID , Drain Current (A) 2.5V 12 10 V GS =2.0V 6 V GS =2.0V 5 0 0 0.5 1 1.5 2 2.5 0 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 I D = 4A T C =25 o C 1.6 40 I D = 4A V GS =4.5V RDS(ON) (m ) 35 Normalized R DS(ON) 1.4 1.2 30 1.0 25 0.8 20 1 2 3 4 5 6 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9926EO 6 1.2 5 1 ID , Drain Current (A) 4 0.8 PD (W) 25 50 75 100 125 150 3 0.6 2 0.4 1 0.2 0 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor=0.5 10 100us 1ms Normalized Thermal Response (R thja) 0.2 0.1 0.1 0.05 ID (A) 10ms 1 0.02 100ms 1s 0.1 0.01 PDM 0.01 Single Pulse t T T C =25 C Single Pulse 0.01 0.1 1 10 100 o DC Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=208 oC/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9926EO 12 1000 f=1.0MHz I D =4.6A 10 VGS , Gate to Source Voltage (V) 8 V DS =10V V DS =15V V DS =20V C (pF) 100 Ciss Coss 6 Crss 4 2 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.6 1.4 10 1.2 VGS(th) (V) T j =150 o C T j =25 o C 1 IS (A) 1 0.8 0.6 0.1 0.4 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 0 50 100 150 Junction Temperature ( o C ) V SD (V) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9926EO RD VDS 90% VDS RG D G TO THE OSCILLOSCOPE 0.5 x RATED VDS + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE D G RATED VDS QG 5V QGS QGD S + VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
Price & Availability of AP9926EO
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |